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(R)
STGP10NB60S
N-CHANNEL 10A - 600V TO-220 PowerMESHTM IGBT
TYPE STGP10NB60S
s
V CES 600 V
V CE(sat ) < 1.7 V
IC 10 A
s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT
3 1 2
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 600 20 20 20 10 80 80 0.64 -65 to 150 150
Un it V V V A A A W W /o C
o o
C C
(*) Pulse width limited by safe operating area
June 1999
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STGP10NB60S
THERMAL DATA
R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.56 62.5 0.2
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbo l V BR(CES) V BR(ECR) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Emitter-Collector Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A IC = 1 mA V GE = 0 VGE = 0 T j = 25 oC o T j = 125 C V CE = 0 Min. 600 20 10 100 100 Typ. Max. Unit V V A A nA
V CE = Max Rating V CE = Max Rating V GE = 20 V
ON ()
Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V V GE = 15 V Test Con ditions IC = 250 A IC = 5 A IC = 10 A IC = 10 A Min. 2.5 1.15 1.35 1.25 Typ. Max. 5 Unit V V V V
1.7
Tj = 125 oC
DYNAMIC
Symbo l gf s C i es C o es C res QG I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current Test Con ditions V CE =25 V V CE = 25 V I C = 10 A f = 1 MHz V GE = 0 Min. 5 610 65 12 33 20 780 85 15 Typ. Max. Unit S pF pF pF nC A
V CE = 400 V V clamp = 480 V T j = 150 o C
IC = 10 A RG=1k
VGE = 15 V
SWITCHING ON
Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 1 K T j = 125 o C I C = 10 A R G = 1 K I C = 10 A V GE = 15 V Min. Typ. 0.7 0.46 8 0.6 Max. Unit s s A/s mJ
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STGP10NB60S
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbo l tc t r (v off ) tf E o ff(**) tc t r (v off ) tf E o ff(**) Parameter Test Con ditions I C = 10 A V GE = 15 V Min. Typ. 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit s s s mJ s s s mJ
Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 100 Fall T ime Turn-off Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 100 Fall T ime T j = 125 o C Turn-off Switching Loss
I C = 10 A V GE = 15 V
(*) Pulse width limited by safe operating area () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
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STGP10NB60S
Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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STGP10NB60S
Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Temperature
Off Losses vs Collector Current
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STGP10NB60S
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Test Circuit For Inductive Load Switching
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STGP10NB60S
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
A
C
D1
L2 F1
D
G1
Dia. F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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STGP10NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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